fabricating technique meaning in Chinese
制造技术
Examples
- Then we optimized the structure of electrodes . on the basis of the theoretical analysis and design , we brought forward a method of fabricating technique for our laboratory , and we finished the fabrication of proton - exchange linboa phase modulator
在理论分析、设计的基础上，提出了与实验室水平相适应的质子交换器件制作方法，完成了质子交换linbo _ 3单y相位调制器的制作。 - Through the work in this dissertation , the theoretical analysis , design and the study of the fabricating technique on the polymer / silicon - based integrated to optical chip are all made certain achievements , which will be the basis for the development of the practical chip
通过本论文的工作，对于硅基有机聚合物热光器件的理论分析、设计和制作工艺的研究，取得了一定的成果，这为我们进一步研制实用化的芯片打下了良好的基础。 - On the basis of the theoretical analysis , design and the study on the fabricating technique , the relationship between hull height and writhe speed , the output light which proves the single - mode condition , and the split peculiarity of output light , was gotten
在前面器件理论分析、设计和工艺研究的基础上，我们得到了膜厚度与转速关系特性曲线；得到直波导输出光斑，验证了波导参数满足波导单模性的要求；得到的y分支的输出分光特性。 - Therefore , it is an efficient way to dilute cro2 granules for enhancing extrinsic mr , due to the formation of new metal - insulator microstructure , which adjusts natures of barrier . in much of work published , much interest involves the fabricating technique and magnetotransport of cro2 ferromagnet , experimentally
因此，采用cro _ 2 -绝缘颗粒复合的方法，以形成新的微结构来调整颗粒界面状态和隧穿势垒性质，是降低外磁场、增强外禀磁电阻效应的有效手段。 - Substrates so as to give a microwave index close to the optical index , thus the high bandwidth and high switching speed of the boa device can been gained ; combining the characteristics of the boa device , we proposed a traveling - wave electrode boa - type device of 3db bandwidth greater than 20ghz . on the basis of the theoretical analysis , design and the study on the fabricating technique , we have made the fabrication of the chip using the self - adjusted technics
在前面器件理论分析、设计和工艺研究的基础上，我们完成了gaas gaaias双异质结boa波导型光开关集成光学芯片的制作，单个器件的大小可以控制在15xlnd以内，制作后的器件形状较理想c但目前由于条件所限，我们目前仅测量了器件的ai gaasschottky特性和器件初步效应。